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1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 | #Fichier de parametrisation de TAS, PROL10, LEVEL 2, HSPICE
#Les parametres sont calcules en tenant compte des shrinks
#Par DIOURY karim, le 15/06/1995
Technologie : prol10 Version : 2.0
#Reference Simulator
ESIM = HSPICE
MODEL = MOS
LEVEL = 2.0
#shrink parameters (micron)
DLN = 0.0
DLP = 0.0
DWN = 0.0
DWP = 0.0
#transistor characteristics
#NMOS
VTN = 0.8
BN = 0.7
AN = 4.8e-05
RNT = 11000.0
#PMOS
VTP = 1.2
BP = 0.25
AP = 1.7e-05
RPT = 26000.0
#general parameters
VDDmax = 4.50
VTHR = 2.250
VSSdeg = 1.6
VDDdeg = 3.5
TEMP = 70.0
#dynamic capacitance: grid capacitance (in pF/u and pF/u2)
CGSN = 1500.0e-6
CGSP = 1500.0e-6
CGPN = 200.0e-6
CGPP = 200.0e-6
#dynamic capacitance: drain capacitance (in pF/u and pF/u2)
CDSN = 400.0e-6
CDSP = 600.0e-6
CDPN = 500.0e-6
CDPP = 800.0e-6
CDWN = 200.0e-6
CDWP = 200.0e-6
#dynamic capacitance: source capacitance (in pF/u and pF/u2)
CSSN = 400.0e-6
CSSP = 600.0e-6
CSPN = 500.0e-6
CSPP = 800.0e-6
CSWN = 200.0e-6
CSWP = 200.0e-6
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